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SH8M70
Data Sheet
10
10
V DS =10V
5
Pulsed
4
1
3
1
Ta=125 ° C
75 ° C
25 ° C
-25 ° C
0.1
Ta=-25 ° C
25 ° C
75 ° C
125 ° C
2
1
V GS =10V
Pulsed
0.1
0.1
1
Drain Current : -I D (A)
10
0.01
0.01
0.1 1
Drain Current : -I D (A)
10
V DS =10V
I D =1mA
0
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch: ( ° C)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Gate Threshold Voltage
vs. Channel Temperature
1000
100
5
4
V GS =10V
Pulsed
I D =2.5A
(X-1)
2
1.8
1.6
V GS =-10V
-9V
-8V
-7V
-6V
3
1.25A
1.4
1.2
T C =25 ° C
Single Pulsed
10
2
1
1
0.8
0.6
-5V
0.4
1
0.1 1 10
Reverse Drain Current : -I DR (A)
Fig.10 Reverse Recovery Time vs.
Reverse Drain Current
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0
-50 -25 0 25 50 75 100 125 150
Temperature : Tch ( ° C)
Fig.11 Static Drain-Source On-State
Resistance vs.Channel Temperature
6/7
0.2
0
-4V
0 2 4 6 8 10
Drain-Sourse Voltage : -V DS (V) (X-1)
Fig.12 Typical Output Characteristics
2010.06 - Rev.B
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